| PART |
Description |
Maker |
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| M36L0R7040B0 M36L0R7040T0 |
128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
|
STMicroelectronics
|
| AT52SQ1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
| IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
Integrated Silicon Solution, Inc.
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| CY14B101NA-ZS25XI CY14B101NA-ZS25XIT CY14B101NA-ZS |
1-Mbit (128 K 8/64 K 16) nvSRAM
|
Cypress
|
| M27C1001-12XBTR M27C1001-12XFTR M27C1001-25XBTR M2 |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位128千位× 8）紫外线存储器和OTP存储
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位28千位× 8）紫外线存储器和OTP存储
|
意法半导
STMicroelectronics N.V.
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
